Name: /Tools-Info/Irfp064npbf Ir China To247
Brand: EstiSource
Availability: InStock

IRFP064NPBF IR CHINA TO247

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IRFP064NPBF IR CHINA TO247

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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One Click Product Costing

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IRFP064NPBF N-Channel Power MOSFET – TO-247

is a high-performance N-channel power MOSFET manufactured by International Rectifier (now part of Infineon) and commonly sourced from IR’s Chinese manufacturing lines. Housed in a robust TO-247 package, it is designed for high-current, high-efficiency switching applications such as DC motor control, power inverters, battery chargers, and industrial SMPS systems. With a maximum drain current of over 110A and an extremely low R_DS(on) of just 0.008Ω, this part stands out for its efficiency and thermal performance. It’s frequently used in systems where power density and fast switching are essential.

How EstiSource Helps

EstiSource supports design and sourcing teams by streamlining the acquisition of critical components like the IRFP064NPBF. From real-time cost insights and alternate part recommendations to trusted supplier links and availability alerts, our platform ensures engineers and buyers reduce procurement time and cost, especially when dealing with high-current power semiconductor devices.

Why Choose EstiSource for Sourcing

EstiSource is more than a parts catalog—it’s a decision engine for smart sourcing. We help engineers, purchasers, and innovators reduce risk and accelerate development by delivering verified sourcing intelligence, real-time pricing, and built-in engineering support. With a platform trusted by B2B buyers and design teams across sectors, we ensure that every component like IRFP064NPBF is backed by data, transparency, and reliability.

1. Material Composition

▶

The IRFP064NPBF comprises the following key materials:

Silicon Die: Trench-gate N-channel MOSFET optimized for low RDS(on) and fast switching.
Copper Leadframe: Provides mechanical support and low-resistance electrical conduction to the leads.
Epoxy Resin Mold Compound: Protects internal components from mechanical and environmental stress.
Aluminum Bond Wires: Connect the MOSFET die to the external leads.
Nickel/Tin Plated Leads: Ensures good solderability and corrosion resistance.
TO-247 Package Resin: Thermally conductive plastic composite rated for up to 150°C.

2. Manufacturing Process

▶

Wafer Fabrication: The MOSFET structure is created on a silicon wafer using trench technology and high-dose ion implantation for doping.
Die Sawing & Selection: The wafer is diced, and each die is tested for electrical performance and defect levels.
Die Attach to Leadframe: The die is affixed to a copper base for electrical and thermal conduction.
Wire Bonding: Aluminum wire bonds are ultrasonically welded between the die and external pins.
Encapsulation: The assembly is overmolded in a TO-247 high-temperature-resistant epoxy resin.
Lead Plating & Trimming: Leads are trimmed and plated for consistent solderability.
Final Testing & Packaging: Devices are tested for V_DS, I_D, and breakdown performance before packing.

3. Challenges & Limitations

▶

Thermal Management

Despite TO-247’s robustness, poor heatsink design can result in thermal bottlenecks at high current loads.

Availability Fluctuations

Since this part is often sourced from IR China, lead times and pricing can fluctuate based on regional demand and import cycles.

Counterfeit Concerns

Being a popular MOSFET, fake or relabeled IRFP064NPBFs flood secondary markets—especially when sourced outside authorized distributors.

Gate Drive Requirements

High gate charge requires proper gate driver IC selection, else switching losses may increase.

4. Costing

▶

Bulk/MOQ Cost: Typically ranges between ₹110 – ₹150 per unit in quantities of 1000+
Small Batch (5–100 units): ₹170 – ₹220 per piece depending on location and distributor

Cost can vary depending on:

Region of sourcing (China direct vs. local India stock)
Verified vs. grey-market vendors
TO-247 variants with specific thermal pads or RoHS tags

Hidden Costs:

Cost of heatsinks, insulators, and thermal grease
Shipping surcharges for TO-247 weight and protection

5. Properties & Characteristics

▶

Max Drain-Source Voltage (V_DS)

55V

Continuous Drain Current (I_D)

110A at 25°C

R_DS(on)

0.008Ω

Gate Threshold Voltage (V_GS(th))

2.0–4.0V

Gate Charge (Q_g)

~160nC

Power Dissipation

300W

Operating Temperature

-55°C to +175°C

Package

TO-247 (3-pin)

Application Areas

High current SMPS, motor drivers, DC-DC converters, inverters

6. Frequently Asked Questions

▶

Q1: What is the IRFP064NPBF commonly used for?

It’s widely used in high-current power conversion systems including battery chargers, inverters, SMPS, and DC motor controllers.

Q2: Is this part RoHS compliant?

Yes, the NPBF suffix indicates it is lead-free and RoHS-compliant.

Q3: Can it handle continuous 110A without heatsink?

No, it requires adequate heatsinking and airflow for high-current continuous usage.

Q4: How is it different from IRFP260N or IRFP150N?

IRFP064NPBF has lower RDS(on) and higher current capacity, making it more efficient at lower voltages.

Q5: What should I check before purchasing from a third-party source?

Ensure that the marking code, pinout, and part body match official IR datasheet, and avoid unusually cheap offers.

Precision in every estimate, excellence in Service.

IRFP064NPBF IR CHINA TO247

One Click Product Costing

1. Material Composition

2. Manufacturing Process

3. Challenges & Limitations

Thermal Management

Availability Fluctuations

Counterfeit Concerns

Gate Drive Requirements

4. Costing

5. Properties & Characteristics

Max Drain-Source Voltage (VDS)

Continuous Drain Current (ID)

RDS(on)

Gate Threshold Voltage (VGS(th))

Gate Charge (Qg)

Power Dissipation

Operating Temperature

Package

Application Areas

6. Frequently Asked Questions

Max Drain-Source Voltage (V_DS)

Continuous Drain Current (I_D)

R_DS(on)

Gate Threshold Voltage (V_GS(th))

Gate Charge (Q_g)